most citedResistive switching in MoSe/BaTiO hybrid structures

30 citations

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2 papers

cond-mat.mes-hall2019★ 21 cited

Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications

Ferney A. Chaves, David Jimenez, Jaime E. Santos +2

Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these…

physics.app-ph2017★ 30 cited

Resistive switching in MoSe/BaTiO hybrid structures

J. P. B. Silva, C. Almeida Marques, J. Agostinho Moreira +1

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO (BTO) and few-layers MoSe are combined in one single structure. The C-V loops re…