Precision Cutting and Patterning of Graphene with Helium Ions

Abstract

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with ~15 nm feature sizes.

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Chaotic Dirac billiard in graphene quantum dots
• Graphene Nano-Ribbon Electronics
• Electron beam nanosculpting of suspended graphene sheets
• Etching of Graphene Devices with a Helium Ion Beam

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