Pressure-induced phase transition in Bi${}_2$Se${}_3$ at 3 GPa: electronic topological transition or not?

Abstract

In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A${}_2$B${}_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi${}_2$Se${}_3$) using Raman spectroscopy at pressure upto 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P $\sim$ 2.4 GPa followed by structural transitions at $\sim$ 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P $\sim$ 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated ${\mathbb{Z}}_2$ invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

arXiv comment18 pages , 6 figures

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Cited by in corpus (2)

• Topological transitions to Weyl states in bulk Bi${}_2$Se${}_3$: Effect of hydrostatic pressure and doping
• Sb2Se3 and SbBiSe3 Surface Capping and Biaxial Strain Co-Engineering for Tuning the Surface Electronic Properties of Bi2Se3 Nanosheet- A Density Functional Theory based Investigation