Enhanced electron-phonon interaction in multi-valley materials
arXiv:1901.08012 · doi:10.1103/PhysRevX.9.031019
Abstract
Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shift of the different valleys, which causes inter-valley charge transfer and reduces the effectiveness of electrostatic screening, thus enhancing electron-phonon interactions. The effect is physically robust, it can play a role in many materials and phenomena, as we illustrate by discussing experimental evidence for its relevance in the occurrence of superconductivity. (short abstract due to size limitations - full abstract in the manuscript)
16 pages, 8 figures
References in corpus (52)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Phonons and related properties of extended systems from density-functional perturbation theory
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table
- Phonons in single and few-layer MoS2 and WS2
- Born-Oppenheimer Breakdown in Graphene
- Thermal Contraction and Disordering of the Al(110) Surface
- Evidence of Ising pairing in superconducting NbSe atomic layers
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Gauge fields in graphene
- Superconductivity of MgB2: Covalent Bonds Driven Metallic
- Precision and efficiency in solid-state pseudopotential calculations
- Characterization of collective ground states in single-layer NbSe2
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
- Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
- Mono- and Bilayer WS2 Light-Emitting Transistors
- Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Gate-induced Superconductivity in atomically thin MoS2 crystals
- Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
- Nature of the Quantum Metal in a Two-Dimensional Crystalline Superconductor
- Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
- Vibrational and optical properties of MoS: from monolayer to bulk
- Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
- Superconducting density of states and vortex cores of 2H-NbS2
- Tailoring the nature and strength of electron-phonon interactions in the SrTiO(001) two-dimensional electron liquid
- Electron-phonon interaction and charge carrier mass enhancement in SrTiO3
- Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films
- Origin of the crossover from polarons to Fermi liquids in transition metal oxides
- Electronic Structure of Epitaxial Single-Layer MoS
- Electrostatically Induced Superconductivity at the Surface of WS
- A full superconducting dome of strong Ising protection in gated monolayer WS2
- Adiabatic and non-adiabatic phonon dispersion in a Wannier function approach
- Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
- Holstein polaron in a valley-degenerate two-dimensional semiconductor
- Mobility of 2D materials from first principles in an accurate and automated framework
- Giant spin-splitting and gap renormalization driven by trions in single-layer WS/h-BN heterostructures
- Renormalization of quasiparticle band gap in doped two-dimensional materials from many-body calculations
- Giant non-adiabatic effects in layer metals: Raman spectra of intercalated graphite explained
- Growth and electronic structure of epitaxial single-layer WS on Au(111)
- Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2
- Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
- Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
- Second order resonant Raman scattering in single layer tungsten disulfide (WS)
- Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors
- Spin-resolved optical conductivity of two-dimensional group-VIB transition-metal dichalcogenides
- Zero point motion and direct/indirect bandgap crossover in layered transition-metal dichalcogenides
- Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers
Cited by in corpus (20)
- Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold
- Nonequilibrium Lattice Dynamics in Monolayer MoS2
- Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers
- Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Multi-gap topology and non-Abelian braiding of phonons from first principles
- Unveiling valley lifetimes of free charge carriers in monolayer WSe
- Direct view of phonon dynamics in atomically thin MoS
- Dynamical renormalization of electron-phonon coupling in conventional superconductors
- Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe
- Monolayer WS electro- and photo-luminescence enhancement by TFSI treatment
- Emergence of large non-adiabatic effects induced by the electron-phonon interaction on the complex vibrational quasi-particle spectrum of the doped monolayer MoS
- The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
- Approximate symmetries, insulators, and superconductivity in continuum-model description of twisted WSe
- Competition between phonon mediated superconductivity and carriers localization in field-effect doped molybdenum dichalcogenides
- First-principles study on the electrical resistivity in zirconium dichalcogenides with multi-valley bands: mode-resolved analysis of electron-phonon scattering
- Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
- Ab-initio Van der Waals electrodynamics: polaritons and electron scattering from plasmons and phonons in BN-capped graphene
- Nonreciprocal phonon dichroism induced by Fermi pocket anisotropy in two-dimensional Dirac materials
- Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals