Growth and electronic structure of epitaxial single-layer WS${}_2$ on Au(111)

Abstract

Large-area single-layer WS${}_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H${}_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\bar{\Gamma }$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\bar{\Gamma }$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS${}_2$ a promising alternative to the widely studied MoS${}_2$ for applications in electronics, spintronics and valleytronics.

6 pages, 5 figures

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Electrical Transport Properties of Single-Layer WS2
• Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
• Dirac Cones and Minigaps for Graphene on Ir(111)
• In Situ Detection of Active Edge Sites in Single-Layer MoS${}_2$ Catalysts
• MoS2 Transistors Operating at Gigahertz Frequencies
• Electronic Structure of Epitaxial Single-Layer MoS${}_2$
• Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
• Synthesis of Epitaxial Single-Layer MoS${}_2$ on Au(111)
• Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2
• Graphene on Ir(111) characterized by angle-resolved photoemission
• Optical generation and detection of pure valley current in monolayer transition metal dichalcogenides

Cited by in corpus (34)

• Giant spin-splitting and gap renormalization driven by trions in single-layer WS${}_2$/h-BN heterostructures
• Crystalline and electronic structure of single-layer TaS${}_2$
• Ultrasensitive and highly accurate long-range surface plasmon resonance biosensors based on two-dimensional transition metal dichalcogenides
• Superlubricity of epitaxial monolayer WS2 on graphene
• Characterization of Thin Film Materials using SCAN meta-GGA, an Accurate Nonempirical Density Functional
• Enhanced electron-phonon interaction in multi-valley materials
• Observation of an excitonic Mott transition through ultrafast core-$\text{cum}$-conduction photoemission spectroscopy
• In-situ exfoliation method of large-area 2D materials
• Spin and Valley Control of Free Carriers in Single-Layer WS${}_2$
• Spatially Resolved Electronic Properties of Single-Layer WS${}_2$ on Transition Metal Oxides
• Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS${}_2$
• Spin structure of K valleys in single-layer WS${}_2$ on Au(111)
• Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field
• Nanoscale patterning of quasiparticle band alignment
• Larger than 80% Valley Polarization of Free Carriers in Singly-Oriented Single Layer WS${}_2$ on Au(111)
• Epitaxial single layer NbS${}_2$ on Au(111): synthesis, structure, and electronic properties
• Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
• Substrate-induced suppression of charge density wave in monolayer 1H-TaS2 on Au(111)
• Electron-phonon coupling in the spin-split valence band of single layer WS${}_2$
• Broken adiabaticity induced by Lifshitz transition in MoS${}_2$ and WS${}_2$ single layers
• GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment
• Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer
• Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe${}_2$
• Benchmarking exchange-correlation potentials with the mstar60 dataset: Importance of the nonlocal exchange potential for effective mass calculations in semiconductors
• Growth and applications of two-dimensional single crystals
• Momentum-resolved linear dichroism in bilayer MoS${}_2$
• The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
• Electron-phonon coupling in single-layer MoS2
• Quasi-free-standing single-layer WS2 achieved by intercalation
• Unidirectional Rashba Spin Splitting in Single Layer WS${}_{2(1-x)}$Se${}_{2x}$ alloy
• Phase engineering in tantalum sulfide monolayers on Au(111)
• Moiré induced electronic structure modifications in monolayer V${}_2$S${}_3$ on Au(111)
• Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission
• Growth and crystallographic structure of TiTe${}_2$ on Au(111): From sub-monolayer structures to single- and multi-layer films