Electron-phonon coupling in single-layer MoS2

Abstract

The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS${}_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $\lambda$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $\lambda$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS${}_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS${}_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS${}_2$ at K is almost degenerate with the local valence band maximum at $\Gamma$ can potentially be used to tune the strength of the electron-phonon interaction in this material.

References in corpus (22)

• Atomically thin MoS2: A new direct-gap semiconductor
• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Optimized norm-conserving Vanderbilt pseudopotentials
• MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
• The Valley Hall Effect in MoS2 Transistors
• EPW: Electron-phonon coupling, transport and superconducting properties using maximally localized Wannier functions
• Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
• Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
• Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
• Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Thermal conductivity of monolayer MoS2, MoSe2, and WS2: Interplay of mass effect, interatomic bonding and anharmonicity
• Electronic Structure of Epitaxial Single-Layer MoS${}_2$
• Single-layer MoS${}_2$ on Au(111): band gap renormalization and substrate interaction
• Improved tetrahedron method for the Brillouin-zone integration applicable to response functions
• Growth and electronic structure of epitaxial single-layer WS${}_2$ on Au(111)
• Electron-phonon interaction and transport properties of metallic bulk and monolayer transition metal dichalcogenide TaS${}_2$
• Spin structure of K valleys in single-layer WS${}_2$ on Au(111)
• Strong electron-phonon coupling in the sigma band of graphene
• Electron-phonon coupling in the spin-split valence band of single layer WS${}_2$
• Woptic: optical conductivity with Wannier functions and adaptive k-mesh refinement
• Quasi-free-standing single-layer WS2 achieved by intercalation

Cited by in corpus (4)

• Epitaxial single layer NbS${}_2$ on Au(111): synthesis, structure, and electronic properties
• Broken adiabaticity induced by Lifshitz transition in MoS${}_2$ and WS${}_2$ single layers
• Spectral functions of CVD grown MoS${}_2$ monolayers after chemical transfer onto Au surface
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride