Electron-phonon coupling in the spin-split valence band of single layer WS${}_2$

Abstract

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS${}_2$ or WS${}_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS${}_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of ${\lambda }_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.

arXiv comment5 pages, 4 figures

References in corpus (24)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Atomically thin MoS2: A new direct-gap semiconductor
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Optimized norm-conserving Vanderbilt pseudopotentials
• Phonons in single and few-layer MoS2 and WS2
• Evidence for ubiquitous strong electron-phonon coupling in high-temperature superconductors
• EPW: Electron-phonon coupling, transport and superconducting properties using maximally localized Wannier functions
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Dirac Cones and Minigaps for Graphene on Ir(111)
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
• A precise method for visualizing dispersive features in image plots
• Topological superconductivity in monolayer transition metal dichalcogenides
• Electronic Structure of Epitaxial Single-Layer MoS${}_2$
• Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS${}_2$
• Improved tetrahedron method for the Brillouin-zone integration applicable to response functions
• Graphene on Ir(111) characterized by angle-resolved photoemission
• Phonon-induced spin relaxation of conduction electrons in aluminum
• Growth and electronic structure of epitaxial single-layer WS${}_2$ on Au(111)
• Strong electron-phonon coupling in the sigma band of graphene
• Woptic: optical conductivity with Wannier functions and adaptive k-mesh refinement
• Phonon limited thermoelectric transport in Pb
• $B{i}_{2}T{e}_3$: Implications of the rhombohedral k-space texture on the evaluation of the in-plane/out-of-plane conductivity anisotropy

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