activity
20162018
most citedOptically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

187 citations · 385 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2018★ 9 cited

Electron-phonon coupling in single-layer MoS2

Sanjoy K. Mahatha, Arlette S. Ngankeu, Nicki Frank Hinsche +15

The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS is studied using angle-resolved photoemission spectroscopy and density function…

cond-mat.str-el2017★ 29 cited

Electron-phonon coupling in the spin-split valence band of single layer WS

Nicki Frank Hinsche, Arlette S. Ngankeu, Kevin Guilloy +15

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS…

cond-mat.str-el2017★ 57 cited

Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of -TaS

Arlette S. Ngankeu, Kevin Guilloy, Sanjoy K. Mahatha +5

The commensurate charge density wave (CDW) in the layered compound -TaS has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calcul…

physics.optics2017★ 187 cited

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

V. Reboud, A. Gassenq, N. Pauc +13

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For i…

cond-mat.mtrl-sci2017★ 87 cited

Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents

A. Gassenq, L. Milord, J. Aubin +8

GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…

cond-mat.mtrl-sci2016★ 3 cited

Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

K. Guilloy, N. Pauc, A. Gassenq +15

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…

cond-mat.mtrl-sci2016

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Samuel Tardif, Alban Gassenq, Kevin Guilloy +14

Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the su…

cond-mat.mtrl-sci2016★ 13 cited

Uniaxially stressed germanium with fundamental direct band gap

R. Geiger, T. Zabel, E. Marin +17

We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…