Synthesis of Epitaxial Single-Layer MoS${}_2$ on Au(111)

Abstract

We present a method for synthesizing large area epitaxial single-layer MoS${}_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS${}_2$ islands to a continuous MoS${}_2$ layer. An exceptionally good control over the MoS${}_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS${}_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS${}_2$ islands, we identify domains rotated by 60${}^{\circ }$ that lead to atomically sharp line defects at domain boundaries. As the MoS${}_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS${}_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS${}_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS${}_2$ layer from vacuum is not found to affect its quality.

8 pages, 6 figures

References in corpus (4)

• Two Dimensional Atomic Crystals
• Valley polarization in MoS2 monolayers by optical pumping
• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• Electronic Structure of Epitaxial Single-Layer MoS${}_2$

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