Trapping the carrier in the spin-locked MoS2 atomic valley by absorption of chiral L-cysteine
arXiv:2108.01106 · doi:10.1063/5.0065333
Abstract
This work, demonstrate enhanced valley contrasting spin-momentum locked chiral states at van der Waal interface of chiral L-cysteine and mono-atomically thin MoS2 placed at Si/SiO2 substrate at ambient condition. Helicity dependent photoluminescence and resonance Raman measurement highlights spin-locked transitions for chiral L-cysteine modified SL MoS2 at ambient condition. Selective adsorption of chiral L-cysteine dimer /cystine on monolayer MoS2, stabilizes the in-plane effective magnetic field due to Si/SiO2 substrate and blocks the intervalley spin relaxation. The observed polarisation efficiency will be useful for improving the functionality of valley-based light emitting diode (LEDs) and encoding information in logical devices.
23 pages (6 figures, 3 sup figures)
References in corpus (7)
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
- Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
- Anomalous excitonic resonance Raman effects in few-layer MoS2
- Highly Valley-Polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure
- Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder