activity
20072023
most citedElectrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

3.6k citations · 5.5k across the 13 of their papers we have counts for

collaborators

13 papers

physics.optics2023★ 1 cited

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Amit Bhunia, Pragya Joshi, Nitesh Singh +2

Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technol…

cond-mat.mes-hall2021★ 9 cited

Doping controlled Fano resonance in bilayer 1T-ReS: Raman experiments and first-principles theoretical analysis

Subhadip Das, Suchitra Prasad, Biswanath Chakraborty +6

In the bilayer ReS channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broade…

cond-mat.mes-hall2020★ 2 cited

Symmetry induced phonon renormalization in few layers of 2H-MoTe transistors: Raman and first-principles studies

Subhadip Das, Koyendrila Debnath, Biswanath Chakraborty +5

Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectroni…

physics.app-ph2019★ 176 cited

A Room Temperature Polariton Light-Emitting Diode Based on Monolayer WS2

Jie Gu, Biswanath Chakraborty, Mandeep Khatoniar +1

Half-light half-matter quasiparticles termed exciton-polaritons arise through the strong coupling of excitons and cavity photons. They have been used to demonstrate a wide array of…

cond-mat.quant-gas2018★ 164 cited

Interacting polariton fluids in a monolayer of tungsten disulfide

Fábio Barachati, Antonio Fieramosca, Soroush Hafezian +7

Atomically thin transition metal dichalcogenides (TMDs) possess a number of properties that make them attractive for realizing room-temperature polariton devices. An ideal platform…

cond-mat.mes-hall2016

Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor

Biswanath Chakraborty, Satyendra Nath Gupta, Anjali Singh +6

Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A symmetry depend much more str…