Large-Scale and Robust Multifunctional Vertically-Aligned MoS${}_2$ Photo-Memristors

Abstract

Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is considered a novel way to integrate optical information with electrical circuitry. On the other hand, 2D materials have attracted substantial consideration thank to their unique crystal structure, as reflected in their chemical and physical properties. Although not the major focus, van der Waals solids were proven to be potential candidates in memristive devices. In this scheme, the majority of the resistive switching devices were implemented on planar flakes, obtained by mechanical exfoliation. Here we utilize a facile and robust methodology to grow large-scale vertically aligned MoS${}_2$ (VA-MoS${}_2$) films on standard silicon substrates. Memristive devices with the structure silver/VA-MoS${}_2$/Si are shown to have low set-ON voltages (<0.5V), large-retention times ($>2\times 10^4$ s) and high thermal stability (up to 350 ${}^{\circ }$C). The proposed memristive device also exhibits long term potentiation / depression (LTP/LTD) and photo-active memory states. The large-scale fabrication, together with the low operating voltages, high thermal stability, light-responsive behaviour and long-term potentiation/depression, makes this approach very appealing for real-life non-volatile memory applications.

arXiv commentAdvanced Functional Materials - In Press 18 pages, 7 figures

References in corpus (4)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2
• Robust memristors based on layered two-dimensional materials
• Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Cited by in corpus (5)

• Mechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials
• Volatile MoS${}_2$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
• Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
• Unraveling the dynamics of conductive filaments in MoS${}_2$ based memristors by operando transmission electron microscopy
• Threshold Switching in Vertically Aligned MoS${}_2$/SiO${}_x$ Heterostructures based on Silver Ion Migration