438 citations · 579 across the 6 of their papers we have counts for
6 papers
Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky +3
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterpar…
Large-Scale and Robust Multifunctional Vertically-Aligned MoS Photo-Memristors
Kamalakannan Ranganathan, Mor Feingenbaum, Ariel Ismach
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive sw…
Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers
Assael Cohen, Avinash Patsha, Pranab K. Mohapatra +5
Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the mos…
Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique
Yingnan Liu, Rudresh Ghosh, Di Wu +3
The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materi…
Non-destructive and Rapid Evaluation of CVD Graphene by Dark Field Optical Microscopy
Xianghua Kong, Hengxing Ji, Richard D. Piner +6
Non-destructive and rapid evaluation of graphene directly on the growth substrate (Cu foils) by dark field (DF) optical microscopy is demonstrated. Without any additional treatment…
Fermi velocity engineering in graphene by substrate modification
Choongyu Hwang, David A. Siegel, Sung-Kwan Mo +5
The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device appli…