713 citations · 1.1k across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 713 cited
Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
V. K. Sangwan, D. Jariwala, I. S. Kim +4
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced signif…
cond-mat.mtrl-sci2014★ 351 cited
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS
In Soo Kim, Vinod K. Sangwan, Deep Jariwala +11
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to m…