On the switching mechanism and optimisation of ion irradiation enabled 2D $Mo{S}_2$ memristors

Abstract

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional $2H-Mo{S}_2$ planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose practical routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.

8 pages (double column), 6 figures, Supplementary Information (9 figures)

References in corpus (4)

• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
• Non-volatile switching in graphene field effect devices
• Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Cited by in corpus (3)

• Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems
• Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations
• Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach