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Hongzhou Zhang

1 paper hereh-index 292.7k citations117 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • last author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • physics.comp-ph1
same name
  • Hongzhou Zhang — 8 papers, h 43
  • Hongzhou Zhang — 2 papers, h 1
  • Hongzhou Zhang — 1 paper, h 0

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedOn the switching mechanism and optimisation of ion irradiation enabled 2D MoS2​ memristors

13 citations · 13 across the 1 of their papers we have counts for

collaborators

1 paper

physics.comp-ph2023★ 13 cited

On the switching mechanism and optimisation of ion irradiation enabled 2D MoS2​ memristors

Samuel Aldana, Jakub Jadwiszczak, Hongzhou Zhang

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memr…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.