Defect-induced conductivity anisotropy in MoS2 monolayers

Abstract

Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the Density-Functional based Tight-Binding method in conjunction with the Green's Function approach. Intrinsic defects in MoS2 monolayers significantly affect their electronic properties. Even at low concentration they considerably alter the quantum conductance. While the electron transport is practically isotropic in pristine MoS2, strong anisotropy is observed in the presence of defects. Localized mid-gap states are observed in semiconducting MoS2 that do not contribute to the conductivity but direction-dependent scatter the current, and that the conductivity is strongly reduced across line defects and selected grain boundary models.

13 pages, 6 figures, submition to Phys. Rev. B

References in corpus (7)

• Two Dimensional Atomic Crystals
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Mechanical and Electronic Properties of MoS${}_2$ Nanoribbons and Their Defects
• Small-signal amplifier based on single-layer MoS2
• Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies

Cited by in corpus (22)

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• Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
• Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus
• Lattice Defects and the Mechanical Anisotropy of Borophene
• Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2
• Chemical and Electronic Repair Mechanism of Sulfur Defects in MoS${}_2$ Monolayers
• Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy
• Atomic structure of intrinsic and electron-irradiation-induced defects in MoTe2
• Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
• Robust valley polarization of helium ion modified atomically thin MoS${}_2$
• Localized defect states in MoS${}_2$ monolayers: electronic and optical properties
• Valley Hall effect in disordered monolayer MoS2 from first principles
• Optoelectronic properties of defective MoS${}_2$ and WS${}_2$ monolayers
• Electronic Properties of Defective MoS${}_2$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach
• Effect of line defects on the electrical transport properties of monolayer MoS${}_2$ sheet
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• On the switching mechanism and optimisation of ion irradiation enabled 2D $Mo{S}_2$ memristors
• Probing defect states in few-layer MoS${}_2$ by conductance fluctuation spectroscopy
• The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
• Effect of Interfacial Defects on the Electronic Properties of MoS${}_2$ Based Lateral T-H Heterophase Junctions