Formation of Near-IR Excitons in Low Dimensional CuSbS${}_2$

Abstract

The electronic and optical properties of low-dimensional semiconductors are typically quite different from those of their bulk counterparts. Yet, the optical gap of two-dimensional copper antimony disulfide (CuSbS${}_2$) does not dramatically change with decreasing thickness of the material. The absorption onset remains at about 1.5 eV in the monolayer, bilayer, and bulk materials. Using density functional theory and many-body perturbation theory, we rationalize this behavior through the interplay of quantum confinement, electron-hole interactions, and the formation of surface states. Specifically, the spatial confinement in thin layers induces strongly bound optical transitions in the near-infrared region. Our results explain the optical properties in copper antimony disulfide platelets of varying thickness and set these materials as potential candidates for novel photovoltaic devices and near-infrared sensors.

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Atomically thin MoS2: A new direct-gap semiconductor
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
• Hexagonal boron nitride is an indirect bandgap semiconductor
• Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
• Enhanced Light-Matter Interaction in Graphene/h-BN van der Waals Heterostructures
• MoTe2 as a natural hyperbolic material across the visible and the ultraviolet region