A Versatile Post-Doping Towards Two-Dimensional Semiconductors

Abstract

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Position-selective doping has also been demonstrated by the post-doping toward TMDs with a patterned mask on the surface. The post-doping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

References in corpus (4)

• Sequential Edge-Epitaxy in 2D Lateral Heterostructures
• Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
• Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors
• Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers

Cited by in corpus (1)

• Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition