Highly anisotropic thermoelectric properties of carbon sulfide monolayers
arXiv:1811.06656 · doi:10.1088/1361-648X/aafe9f
Abstract
Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by strain control on the basis of first-principles calculations. We consider uniaxial and biaxial tensile strain and we find a highly anisotropic electronic and thermoelectonic responses depending on the direction of the applied strain. Our results indicate that strain-induced response could be an effective method to control the electronic response and the thermoelectric performance.
arXiv comment5 pages, 4 figures
References in corpus (23)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Black phosphorus field-effect transistors
- BoltzTraP. A code for calculating band-structure dependent quantities
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Epitaxial Growth of a Silicene Sheet
- Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
- Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
- Phosphorene nanoribbon as a promising candidate for thermoelectric applications
- Designing isoelectronic counterparts to layered group V semiconductors
- Diameter dependence of thermoelectric power of semiconducting carbon nanotubes
- Electronic transport through bilayer graphene flakes
- Mechanically Controlled Quantum Interference in Graphene Break Junctions
- Electronic Structure and the Properties of Phosphorene Systems
- Enhanced Seebeck effect in graphene devices by strain and doping engineering
- The reltation between the electronic structure and thermoelectric transport properties for Zintl compounds M2Zn5As4 (M=K, Rb)
- Quantum Hall effect in gapped graphene heterojunctions
- Spin and charge caloritronics in bilayer graphene flakes with magnetic contacts
- Carbon Monosulfide Nanostructures: Chains Arrays, Monolayers, and Thin Films
- Electron Confinement Induced by Diluted Hydrogen-like Ad-atoms in Graphene Ribbons