Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
arXiv:1605.08207 · doi:10.1103/PhysRevB.94.085415
Abstract
We perform ab initio calculations of the coupling between electrons and small-momentum polar-optical phonons in monolayer transition metal dichalcogenides of the 2H type: MoS2, MoSe2, MoTe2, WS2, and WSe2. The so-called Fröhlich interaction is fundamentally affected by the dimensionality of the system. In a plane-wave framework with periodic boundary conditions, this coupling is affected by the spurious interaction between the 2D material and its periodic images. To overcome this, we perform density functional perturbation theory calculations with a truncated Coulomb interaction in the out-of-plane direction. We show that the 2D Fröhlich interaction is much stronger than assumed in previous ab initio studies. We provide analytical models depending on the effective charges and dielectric properties of the materials to interpret our ab initio calculations. Screening is shown to play a fundamental role in the phonon-momentum dependency of the polar-optical coupling, with a crossover between two regimes depending on the dielectric properties of the material relative to its environment. The Fröhlich interaction is screened by the dielectric environment in the limit of small phonon momenta and sharply decreases due to stronger screening by the monolayer at finite momenta. The small-momentum regime of the ab initio Fröhlich interaction is reproduced by a simple analytical model, for which we provide the necessary parameters. At larger momenta, however, direct ab initio calculations of electron-phonon interactions are necessary to capture band-specific effects. We compute and compare the carrier relaxation times associated to the scattering by both LO and A1 phonon modes. While both modes are capable of relaxing carriers on timescales under the picosecond at room temperature, their absolute and relative importance vary strongly depending on the material, the band, and the substrate.
14 pages, 8 figures
References in corpus (8)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
- First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
- Screening in 2D: GW calculations for surfaces and thin films using the repeated-slab approach
- Density-functional calculation of static screening in 2D materials: the long-wavelength dielectric function of graphene
Cited by in corpus (72)
- Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
- First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
- Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
- Perturbo: a software package for ab initio electron-phonon interactions, charge transport and ultrafast dynamics
- Ab initio Electron Mobility and Polar Phonon Scattering in GaAs
- Breakdown of optical phonons' splitting in two-dimensional materials
- The Coulomb interaction in monolayer transition-metal dichalcogenides
- Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials
- Mobility of 2D materials from first principles in an accurate and automated framework
- Accelerated Carrier Relaxation through Reduced Coulomb Screening in 2D Halide Perovskite Nanoplatelets
- Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility
- Optical properties of charged excitons in two-dimensional semiconductors
- Collective Excitations in 2D Materials
- Phonon polaritonics in two-dimensional materials
- Probing Many-Body Interactions in Monolayer Transition-Metal Dichalcogenides
- Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum
- Marrying excitons and plasmons in monolayer transition-metal dichalcogenides
- Polarons in two-dimensional atomic crystals
- Exciton-phonon coupling strength in single-layer MoSe2 at room temperature
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides
- Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
- Hybrid kp tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS, MoSe, WS and WSe
- Accurate prediction of Hall mobilities in two-dimensional materials through gauge-covariant quadrupolar contributions
- ElecTra Code: Full-Band Electronic Transport Properties of Materials
- Virtual trions in the photoluminescence of monolayer transition-metal dichalcogenides
- Unified ab initio description of Fröhlich electron-phonon interactions in two-dimensional and three-dimensional materials
- Exciton valley depolarization in monolayer transition-metal dichalcogenides
- Exciton formation assisted by longitudinal optical phonons in monolayer transition metal dichalcogenides
- Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
- Ultrafast band-gap renormalization and build-up of optical gain in monolayer MoTe
- Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening
- Phonon Self-Energy Corrections: To Screen, or Not to Screen
- Ab initio Ultrafast Spin Dynamics in Solids
- Ab initio dipolar electron-phonon interactions in two-dimensional materials
- Broken adiabaticity induced by Lifshitz transition in MoS and WS single layers
- Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides: Symmetry and Berry phase
- High-throughput screening of 2D materials identifies p-type monolayer WS as potential ultra-high mobility semiconductor
- Exciton-phonon interaction calls for a revision of the "exciton" concept
- The Wannier Function Software Ecosystem for Materials Simulations
- Phonon-assisted exciton and trion conversion efficiency in transition metal Dichalcogenides
- Remote free-carrier screening to boost the mobility of Fröhlich-limited 2D semiconductors
- Observation of the Breakdown of Optical Phonon Splitting in a Two-dimensional Polar Monolayer
- Electron-phonon interaction and phonons in 2d doped semiconductors
- Exact Ansatz of Fermion-Boson Systems for a Quantum Device
- Atomistic -matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
- Understanding High-Field Electron Transport Properties of Monolayer Transition Metal Dichalcogenides and Strain Effects
- Electronic Transport of Two-Dimensional Ultrawide Bandgap Material h-BeO
- Intervalley Polaron in Atomically Thin Transition Metal Dichalcogenides
- Strain-induced polar discontinuities in two-dimensional materials from combined first-principles and Schrödinger-Poisson simulations
- Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter
- Thermalization of photoexcited carriers in two-dimensional transition metal dichalcogenides and internal quantum efficiency of van der Waals heterostructures
- Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
- Vibrational and dielectric properties of monolayer transition metal dichalcogenides
- Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors
- Variational Polaron Equations Applied to the Anisotropic Fröhlich Model
- Spatial control of carrier capture in two-dimensional materials: Beyond energy selection rules
- Phenomenological model for long wavelength optical modes in transition-metal dichalcogenide monolayer
- Dirac fermion and superconductivity in two-dimensional transition-metal MOH (M= Zr, Hf )
- Electron dynamics in a 2D nanobubble: A two-level system based on spatial density
- Topological phases in -LiN-type crystal structure of light-element compounds
- Manipulating single photon emitter radiative lifetime in transition-metal dichalcogenides through Forster resonance energy transfer to graphene
- Effect of exciton-phonon coupling on the interlayer excitons in transition metal dichalcogenides double layers
- Polariton transport in 2D semiconductors: Phonon-mediated transitions between ballistic, superdiffusive and exciton-limited regimes
- Renormalization of the optical band gap through an effective Thirring interaction for massive Dirac-like electrons
- Two-dimensional moiré phonon polaritons
- Dynamical Orbital Angular Momentum Induced by Circularly Polarized Phonons
- Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO
- Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs
- Generalized deformation potential and machine-learning approaches for electron-phonon coupling and thermoelectric transport in semiconductors
- Elastic Constants and Bending Rigidities from Long-Wavelength Perturbation Expansions
- Exact long-range dielectric screening and interatomic force constants in quasi-2D crystals