Resonant quenching of Raman scattering due to out-of-plane A${}_{1g}$/A'${}_1$ modes in few-layer MoTe${}_2$

Abstract

Temperature-dependent (5 K to 300 K) Raman scattering study of A${}_{1g}$/A'${}_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe${}_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $\lambda$=632.8 nm light excitation, a strongly non-monotonic dependence of the A${}_{1g}$ mode intensity is observed in 2L MoTe${}_2$. The intensity decreases with decreasing temperature down to 220 K and the A${}_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe${}_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180${}^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe${}_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe${}_2$.

arXiv comment19 pages, 6 figures

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• Quantum interference effects in resonant Raman spectroscopy of single- and triple-layer MoTe${}_2$ from first principles
• Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
• Raman scattering from the bulk inactive out-of-plane B${}_{2\text{g}}^1$ mode in few-layer MoTe${}_2$
• Observation of A${}_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
• Pressure-driven phase transitions in bulk HfS${}_2$
• The effect of temperature and excitation energy on Raman scattering in bulk HfS${}_2$