94 citations · 488 across the 29 of their papers we have counts for
30 papers
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
Jakub Rogoza, Jakub Iwanski, Katarzyna Ludwiczak +5
Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To app…
Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope
Iris Niehues, Daniel Wigger, Korbinian Kaltenecker +11
Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field opti…
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk +14
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While common…
Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
Jakub Iwański, Jakub Kierdaszuk, Arkadiusz Ciesielski +3
A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dime…
Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk +10
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the l…
Direction-sensitive graphene flow sensor
P. Kaźmierczak, J. Binder, K. Boryczko +4
Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dep…
Electrostatically-induced strain of graphene on GaN nanorods
Jakub Kierdaszuk, Rafał Bożek, Tomasz Stefaniuk +11
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an ap…
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Jakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska +4
The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished b…
Electron Paramagnetic Resonance of complex in
Jakub Kierdaszuk, Ewelina. B. Możdżyńska, Aneta Drabińska +2
Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron () epitaxial layers grown at temperat…
Influence of Structural Defects on Charge Density Waves in 1T-TaS2
I. Lutsyk, K. Szalowski, P. Krukowski +22
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron…
Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water
Johannes Binder, Aleksandra Krystyna Dąbrowska, Mateusz Tokarczyk +5
Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in…
All-BN Distributed Bragg Reflectors Fabricated in a Single MOCVD Process
Arkadiusz Ciesielski, Jakub Iwański, Piotr Wróbel +7
Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials…
Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
Jakub Iwański, Piotr Tatarczak, Mateusz Tokarczyk +5
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached…
Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Katarzyna Ludwiczak, Aleksandra Krystyna Dąbrowska, Johannes Binder +9
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to…
Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
Jakub Kierdaszuk, Paweł Dąbrowski, Maciej Rogala +11
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them,…
Highly effective gating of graphene on GaN
Jakub Kierdaszuk, Ewelina Rozbiegała, Karolina Piętak +8
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type…
Fundamental mechanisms of hBN growth by MOVPE
Krzysztof Pakuła, Aleksandra Dąbrowska, Mateusz Tokarczyk +5
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towar…
Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures
J. Binder, J. Howarth, F. Withers +11
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high de…
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…
Raman scattering from the bulk inactive out-of-plane B mode in few-layer MoTe
M. Grzeszczyk, K. Gołasa, M. R. Molas +5
Raman scattering from the out-of-plane vibrational modes (A/A'), which originate from the bulk-inactive out-of-plane B mode, are studied in fe…
Surface-enhanced Raman scattering in graphene deposited on AlGaN/GaN axial heterostructure nanowires
Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…
Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures
Igor Wlasny, Roman Stepniewski, Zbigniew Klusek +2
The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectrosco…
Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek +9
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fai…
Resonant quenching of Raman scattering due to out-of-plane A/A' modes in few-layer MoTe
K. Gołasa, M. Grzeszczyk, M. R. Molas +6
Temperature-dependent (5 K to 300 K) Raman scattering study of A/A' phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe is reporte…