77 citations · 93 across the 8 of their papers we have counts for
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Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
Jakub Rogoza, Jakub Iwanski, Katarzyna Ludwiczak +5
Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To app…
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk +14
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While common…
Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
Jakub Iwański, Jakub Kierdaszuk, Arkadiusz Ciesielski +3
A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dime…
Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Katarzyna Ludwiczak, Aleksandra Krystyna Dąbrowska, Johannes Binder +9
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to…
Highly effective gating of graphene on GaN
Jakub Kierdaszuk, Ewelina Rozbiegała, Karolina Piętak +8
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type…
Fundamental mechanisms of hBN growth by MOVPE
Krzysztof Pakuła, Aleksandra Dąbrowska, Mateusz Tokarczyk +5
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towar…