Surface-enhanced Raman scattering in graphene deposited on Al${}_x$Ga${}_{1-x}$N/GaN axial heterostructure nanowires

Abstract

The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement.

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Cited by in corpus (1)

• Highly effective gating of graphene on GaN