activity
20122022
most citedEpitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water

25 citations · 90 across the 7 of their papers we have counts for

collaborators

7 papers

physics.chem-ph2022★ 25 cited

Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water

Johannes Binder, Aleksandra Krystyna Dąbrowska, Mateusz Tokarczyk +5

Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in…

cond-mat.mes-hall2022★ 14 cited

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Jakub Iwański, Piotr Tatarczak, Mateusz Tokarczyk +5

The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached…

cond-mat.mtrl-sci2021★ 1 cited

Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres

Katarzyna Ludwiczak, Aleksandra Krystyna Dąbrowska, Johannes Binder +9

Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to…

cond-mat.mtrl-sci2019★ 5 cited

Fundamental mechanisms of hBN growth by MOVPE

Krzysztof Pakuła, Aleksandra Dąbrowska, Mateusz Tokarczyk +5

Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towar…

cond-mat.mes-hall2018★ 7 cited

Surface-enhanced Raman scattering in graphene deposited on AlGaN/GaN axial heterostructure nanowires

Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11

The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…

cond-mat.mtrl-sci2016★ 22 cited

Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction

J. Papierska, A. Ciechan, P. Bogusławski +16

Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several con…

cond-mat.mes-hall2012★ 16 cited

MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe

J. -G. Rousset, J. Kobak, T. Slupinski +7

We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also presen…