10 citations · 21 across the 7 of their papers we have counts for
7 papers
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
Karol Olszewski, Zbigniew R. Zytkiewicz, Aleksandra Wierzbicka +2
An impact of thin metallic ZrN layers on Si and sapphire wafers on substrate temperature during MBE growth of GaN nanowires is studied. Using nucleation kinetics of GaN as a sensit…
Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
Aleksandra Wierzbicka, Agata Kaminska, Kamil Sobczak +5
Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescen…
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Stanislav Tiagulskyi, Roman Yatskiv, Marta Sobanska +3
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nuclea…
Pseudomagnetic fields and strain engineering: graphene on GaN nanowires
Jakub Kierdaszuk, Paweł Dąbrowski, Maciej Rogala +11
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them,…
Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka +8
We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nano…
Surface-enhanced Raman scattering in graphene deposited on AlGaN/GaN axial heterostructure nanowires
Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…
Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek +9
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fai…