25 citations · 139 across the 13 of their papers we have counts for
14 papers
Deterministic hBN bubbles as a versatile platform for studies on single-photon emitters
Piotr Tatarczak, Tomasz Fąs, Jan Pawłowski +5
Single-photon emitters (SPEs) in two-dimensional materials are highly promising candidates for quantum technologies. SPEs in hexagonal boron nitride (hBN) have been widely investig…
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
Jakub Rogoza, Jakub Iwanski, Katarzyna Ludwiczak +5
Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To app…
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk +14
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While common…
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Jakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska +4
The versatile range of applications for two-dimensional (2D) materials has encouraged scientists to further engineer the properties of these materials. This is often accomplished b…
Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water
Johannes Binder, Aleksandra Krystyna Dąbrowska, Mateusz Tokarczyk +5
Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in…
Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
Jakub Iwański, Piotr Tatarczak, Mateusz Tokarczyk +5
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached…
Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBiTe(BiTe) Superlattices
Joanna Sitnicka, Kyungwha Park, Paweł Skupiński +17
MnBiTe(BiTe) materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state.…
Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Katarzyna Ludwiczak, Aleksandra Krystyna Dąbrowska, Johannes Binder +9
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to…
Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: on
Bartłomiej Seredyński, Zuzanna Ogorzałek, Wiktoria Zajkowska +7
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but…
Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures
A. Bogucki, M. Goryca, A. Łopion +7
In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by…
Fundamental mechanisms of hBN growth by MOVPE
Krzysztof Pakuła, Aleksandra Dąbrowska, Mateusz Tokarczyk +5
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towar…
Surface-enhanced Raman scattering in graphene deposited on AlGaN/GaN axial heterostructure nanowires
Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski +11
The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not…
Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
J. Papierska, A. Ciechan, P. Bogusławski +16
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several con…
MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe
J. -G. Rousset, J. Kobak, T. Slupinski +7
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also presen…