Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T' and 1T'/2H heterostructure
arXiv:1802.00598 · doi:10.1016/j.eml.2018.01.005
Abstract
Transition metal dichalcogenides (TMD) are currently among the most interesting two-dimensional (2D) materials due to their outstanding properties. MoTe2 involves attractive polymorphic TMD crystals which can exist in three different 2D atomic lattices of 2H, 1T and 1T', with diverse properties, like semiconducting and metallic electronic characters. Using the polymorphic heteroepitaxy, most recently coplanar semiconductor/metal (2H/1T') few-layer MoTe2 heterostructures were experimentally synthesized, highly promising to build circuit components for next generation nanoelectronics. Motivated by the recent experimental advances, we conducted first-principles calculations to explore the mechanical properties of single-layer MoTe2 structures. We first studied the mechanical responses of pristine and single-layer 2H-, 1T- and 1T'-MoTe2. In these cases we particularly analyzed the possibility of engineering of the electronic properties of these attractive 2D structures using the biaxial or uniaxial tensile loadings. Finally, the mechanical-failure responses of 1T'/2H-MoTe2 heterostructure were explored, which confirms the remarkable strength of this novel 2D system.
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- Van der Waals heterostructures
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Local strain engineering in atomically thin MoS2
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Chemically-exfoliated single-layer MoS : stability, lattice dynamics and catalytic adsorption from first principles
- Bonding Charge Density and Ultimate Strength of Monolayer Transition Metal Dichalcogenides
- Role of Strain on Electronic and Mechanical Response of Semiconducting Transition-Metal Dichalcogenide Monolayers: an ab-initio study
- Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe: Raman and First-principles studies
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