Bonding Charge Density and Ultimate Strength of Monolayer Transition Metal Dichalcogenides

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible electronic and optoelectronic devices. In this study, we characterize the mechanical response of monolayer group VI TMDs to large elastic deformation using first-principles density functional theory calculations. We find that the ultimate strength and the overall stress response of these 2D materials is strongly influenced by their chemical composition and loading direction. We demonstrate that differences in the observed mechanical behavior can be attributed to the spatial redistribution of the occupied hybridized electronic states in the region between the transition metal atom and the chalcogens. In spite of the strong covalent bonding between the transition metal and the chalcogens, we find that a simple linear relationship can be established to describe the dependence of the mechanical strength on the charge transfer from the transition metal atom to the chalcogens.

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Cited by in corpus (8)

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• Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T' and 1T'/2H heterostructure
• Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances
• Hydrogenation and defect formation control the strength and ductility of MoS2 nanosheets: Reactive molecular dynamics simulation