Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

Abstract

The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying photodetection bandwidths as wide as 300 GHz. The fast photodetector response is a result of the short electron-hole and exciton lifetimes in this material. Recombination of photoexcited carriers in most two-dimensional metal dichalcogenides is dominated by non-radiative processes, most notable among which is Auger scattering. The fast response time, and the ease of fabrication of these devices, make them interesting for low-cost ultrafast optical communication links.

14 pages, 3 figures, 5 Supplementary Notes

References in corpus (10)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Mechanisms of photoconductivity in atomically thin MoS2
• Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
• Intrinsic response time of graphene photodetectors
• Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating
• Ultrafast and spatially resolved studies of charge carriers in atomically-thin molybdenum disulfide
• Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2
• Hot-electron cooling by acoustic and optical phonons in monolayers of MoS${}_2$ and other transition-metal dichalcogenides
• Fast Exciton Annihilation by Capture of Electrons or Holes by Defects via Auger Scattering in Monolayer Metal Dichalcogenides

Cited by in corpus (25)

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• Direct Determination of Band Gap Renormalization in Photo-Excited Monolayer MoS2
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• Interlayer excitons in van der Waals heterostructures: Binding energy, Stark shift, and field-induced dissociation
• 2D condensate of electrons and holes in ultrathin MoTe${}_2$ photocells
• Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors
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• Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse
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• Growth and applications of two-dimensional single crystals
• Radiative and Non-Radiative Exciton Energy Transfer in Monolayers of Two-Dimensional Transition Metal Dichalcogenides
• Optical Control of Ultrafast Photocurrent in Graphene
• Excitonic Bloch equations from first principles
• Probing the formation of dark interlayer excitons via ultrafast photocurrent
• Efficient ionization of two dimensional excitons by intense single cycle terahertz pulses
• Carrier-envelope phase control of ultrafast photocurrents in layered MoS${}_2$
• Valley-controlled many-body exciton interactions in monolayer WSe${}_2$ phototransistors