126 citations · 151 across the 6 of their papers we have counts for
6 papers
XeF-Enhanced Focused Ion Beam Etching and Passivation of GaSb
Pierce Maguire, Darragh Keane, Brian Kelly +2
Focused ion beams (FIBs) are widely used to modify optoelectronic devices, but their utility is severely restricted in some III-V materials due to adverse effects such as nanofibre…
Defect-Moderated Oxidative Etching of MoS2
Pierce Maguire, Jakub Jadwiszczak, Maria O'Brien +4
We report a simple technique for the selective etching of bilayer and monolayer MoS. In this work, chosen regions of MoS were activated for oxygen adsorption and reaction b…
Suppression of the Shear Raman Mode in Defective Bilayer MoS2
Pierce Maguire, Clive Downing, Jakub Jadwiszczak +7
We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 ke…
Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation
Jakub Jadwiszczak, Darragh Keane, Pierce Maguire +12
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the co…
Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS
Jakub Jadwiszczak, Colin O'Callaghan, Yangbo Zhou +14
Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition me…
Programmable graphene doping via electron beam irradiation
Yangbo Zhou, Jakub Jadwiszczak, Darragh Keane +3
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization o…