An innovative way of etching MoS2: Characterization and mechanistic investigation

Abstract

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

arXiv comment22 pages, 9 figures

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Cited by in corpus (19)

• Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
• Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2
• Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
• Spintronics in MoS_2 monolayer quantum wires
• Transition metal dichalcogenide metamaterials with atomic precision
• Floquet Majorana and Para-Fermions in Driven Rashba Nanowires
• Electronic and Optical Properties of Vacancy Defects in Transition Metal Dichalcogenides
• Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching
• Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging
• Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials
• Optical signatures of states bound to vacancy defects in monolayer MoS${}_2$
• Optoelectronic properties of defective MoS${}_2$ and WS${}_2$ monolayers
• Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS${}_2$ Transistor
• Defect-Moderated Oxidative Etching of MoS2
• Finger-gate manipulated quantum transport in Dirac materials
• Geometrical spin manipulation in Dirac flakes
• Atomic Engineering of Single Photon Sources in 2D Boron Nitride Zai-Quan
• Layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors
• Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride