160 citations · 408 across the 5 of their papers we have counts for
6 papers
Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au
E. C. T. O'Farrell, J. Y. Tan, Y. Yeo +4
We intercalate a van der Waals heterostructure of graphene and hexagonal Boron Nitride with Au, by encapsulation, and show that Au at the interface is two dimensional. A charge tra…
Electronic Spin Transport in Dual-Gated Bilayer Graphene
Ahmet Avsar, Ivan Jesus Vera-Marun, Jun You Tan +5
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin…
Enhanced spin-orbit coupling in dilute fluorinated graphene
Ahmet Avsar, Jong Hak Lee, Gavin Kok Wai Koon +1
The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is on…
Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
Xin Luo, Xin Lu, Gavin Kok Wai Koon +4
Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in po…
Electronic transport in graphene-based heterostructures
J. Y. Tan, A. Avsar, J. Balakrishnan +8
While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (…
An innovative way of etching MoS2: Characterization and mechanistic investigation
Yuan Huang, Jing Wu, Xiangfan Xu +9
We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be…