Electrical Control of Optical Properties of Monolayer MoS
arXiv:1211.0341 · doi:10.1016/j.ssc.2012.11.010
Abstract
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS with charge carriers.
arXiv comment5 pages, 4 figures. Supplementary Material included in source files
References in corpus (7)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Graphene Photonics and Optoelectronics
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Low-temperature photocarrier dynamics in monolayer MoS2
- Designing electrical contacts to MoS monolayers: A computational study
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