Giant Two-Photon Absorption in Monolayer MoS2

Abstract

Strong two-photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemistry vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a giant nonsaturation TPA coefficient, larger than that of conventional semiconductors. As a result of TPA, two-photon pumped frequency up-converted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited-state absorption cross section to ground-state cross section of 0.18. In addition, the laser damage threshold of the monolayer MoS2 is 97 GW/cm2, larger than that of the multilayer MoS2 of 78 GW/cm2.

References in corpus (6)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Tightly bound excitons in monolayer WSe2
• Probing Excitonic Dark States in Single-layer Tungsten Disulfide
• Ultrafast and spatially resolved studies of charge carriers in atomically-thin molybdenum disulfide
• Intense femtosecond photoexcitation of bulk and monolayer MoS2

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• Origin of layer number dependent linear and nonlinear optical properties of two-dimensional graphene-like SiC
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