Optically Facet-Resolved Reaction Anisotropy in Two-Dimensional Transition Metal Dichalcogenides
arXiv:2101.02376 · doi:10.1088/2053-1583/ac0297
Abstract
Quantifying anisotropy in the chemical reactions of mesoscopic crystals has mostly resorted on the combination of electron microscopy and diffraction. In this work, we established crystal-facet-resolved kinetic measurements of oxidation reactions in 2D transition metal dichalcogenides (TMDs) using optical second-harmonic generation spectroscopy and scanning probe microscopy. We show the in-plane anisotropy of their bond-breaking reactions is governed by their structure and strongly material-dependent among four TMDs. The facet-resolved analysis directly revealed that the reactions proceed fastest (slowest) for chalcogen (metal)-terminated zigzag edges with armchair edges in the middle. The degree of the anisotropy inducing trigonal oxidation patterns was much higher in MoS2 and MoSe2 than WS2 and WSe2. Kinetic Wulff construction based on edge-specific reaction rates verified the material-dependent mesoscopic reaction patterns. We also show that the reactions are initiated at substrate-mediated defects located on the bottom and top surfaces of 2D TMDs.
References in corpus (19)
- Two Dimensional Atomic Crystals
- Detection of Individual Gas Molecules Absorbed on Graphene
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
- Ultra-strong Adhesion of Graphene Membranes
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping
- Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate
- High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
- Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
- Energy Transfer from Individual Semiconductor Nanocrystals to Graphene
- Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
- Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4
- High-fidelity conformation of graphene to SiO2 topographic features
- Two-Dimensional Water Diffusion at a Graphene-Silica Interface
- Equilibrium Shape of Crystals
- Atomic process of oxidative etching in monolayer molybdenum disulfide
- Interface-Confined Doubly Anisotropic Oxidation of Two-Dimensional MoS2
- Redox-Governed Charge Doping Dictated by Interfacial Diffusion in Two-Dimensional Materials