Limits of funneling efficiency in non-uniformly strained 2D semiconductors
arXiv:2006.04495 · doi:10.1088/2053-1583/abbabf
Abstract
Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a suspended TMDC membrane, the excitons are transported to the point of the highest strain at the center of the membrane. This effect, exciton funneling, can be used to increase photoconversion efficiency in TMDC, to explore exciton transport, and to study correlated states of excitons arising at their high densities. Here, we analyze the limits of funneling efficiency in realistic device geometries. The funneling efficiency in realistic monolayer TMDCs is found to be low, both at room and low temperatures. This results from dominant diffusion at room temperature and short exciton lifetimes at low temperatures. On the other hand, in TMDC heterostructures with long exciton lifetimes the funneling efficiency reaches at room temperature, as the exciton density reaches thermal equilibrium in the funnel. Finally, we show that Auger recombination limits funneling efficiency for intense illumination sources.
7 pages, 4 figures
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
- Evidence of high-temperature exciton condensation in 2D atomic double layers
- Valley-spin polarized Landau levels in a monolayer semiconductor
- Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
- Indentation metrology of clamped, ultra-thin elastic sheets
- Indentation of two-dimensional solids: The signatures of geometrical and material nonlinearity
- Neutral and charged excitons interplay in non-uniformly strain-engineered WS