Edge states in dichalcogenide nanoribbons and triangular quantum dots

Abstract

The electronic structure of monolayer MoS${}_2$ nanoribbons and quantum dots have been investigated by means of an effective $\mathbf{k}\cdot \mathbf{p}$ two-band model. Both systems with borders exhibit states spatially localized on the edges and with energies lying in the band gap. We show that the conduction and valence band curvatures determine the presence/absence of these states whose origin has been related to the marginal topological properties of the MoS${}_2$ single-valley Hamiltonian.

submitted

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Cited by in corpus (15)

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• Tunable spin-polarized edge currents in proximitized transition metal dichalcogenides
• Mass inversion in graphene by proximity to dichalcogenide monolayer
• Theory of edge-state optical absorption in two-dimensional transition metal dichalcogenide flakes
• Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform
• Magnetic field dependence of electronic properties of MoS${}_2$ quantum dots with different edges
• Green${}^{\prime }$s function approach to edge states in transition metal dichalcogenides
• Symmetries and hybridization in the indirect interaction between magnetic moments in MoS${}_2$ nanoflakes
• Noncollinear exchange interaction in transition metal dichalcogenide edges
• Long range of indirect exchange interaction on the edges of MoS${}_2$ flakes
• Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers
• Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures
• Electron Scattering in 2D Semiconductors: Contrasting Dirac and Schrödinger Behavior
• Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides