2 papers
cond-mat.mes-hall2026
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz +11
We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI…
cond-mat.mes-hall2017
Hole weak anti-localization in a strained-Ge surface quantum well
R. Mizokuchi, P. Torresani, R. Maurand +2
We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the ho…