Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
arXiv:2411.05526 · doi:10.1103/PhysRevB.111.205409
Abstract
Holes in Si quantum dots are being investigated for the implementation of electrically addressable spin qubits. In this perspective, the attention has been focused on the electric-field induced transitions between the eigenstates belonging to the ground doublet. Here we theoretically extend the analysis to the first excited doublet. We show that - in a prototypical quantum dot structure - transitions involving the lowest excited states display Rabi frequencies that are several orders of magnitude larger than those occurring in the ground doublet. A clear relation with the symmetries of the eigenstates emerges, as well as a wide tunability of the Rabi frequencies by means of the applied bias. A preliminary discussion on the possible implications of the present results for multilevel manipulation schemes and for multi-hole qubit encodings is provided.
References in corpus (40)
- Ultrastrong coupling regimes of light-matter interaction
- Stimulated Raman adiabatic passage in physics, chemistry and beyond
- Semiconductor Spin Qubits
- A CMOS silicon spin qubit
- A four-qubit germanium quantum processor
- The germanium quantum information route
- Fast two-qubit logic with holes in germanium
- Ge hole spin qubit
- Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
- A single-hole spin qubit
- Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
- Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
- Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
- Strong coupling between a photon and a hole spin in silicon
- A single hole spin with enhanced coherence in natural silicon
- Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
- Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
- Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power
- Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
- Operating semiconductor quantum processors with hopping spins
- Recent advances in hole-spin qubits
- Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
- Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
- On-demand electrical control of spin qubits
- Hole spin driving by strain-induced spin-orbit interactions
- Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
- Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
- Dark states in a carbon nanotube quantum dot
- Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
- A two-dimensional array of single-hole quantum dots
- Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
- A singlet-triplet hole-spin qubit in MOS silicon
- Phase driving hole spin qubits
- Avoiding leakage and errors caused by unwanted transitions in Lambda systems
- Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
- Electrical operation of hole spin qubits in planar MOS silicon quantum dots
- Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
- Coherent population trapping combined with cycling transitions for quantum dot hole spins using triplet trion states
- Quantum estimation and remote charge sensing with a hole-spin qubit in silicon
- Envelope-function theory of inhomogeneous strain in semiconductor nanostructures