Charge noise suppression in capacitively coupled singlet-triplet spin qubits under magnetic field
arXiv:2011.09387 · doi:10.1103/PhysRevB.103.L161409
Abstract
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types of spin qubits, the existence of one for coupled singlet-triplet qubits is unclear. We theoretically demonstrate, using full configuration-interaction calculations, that a range of nearly sweet spots appear in the coupled singlet-triplet qubit system when a strong enough magnetic field is applied externally. We further demonstrate that ramping to and from the judiciously chosen nearly sweet spot using sequences based on the shortcut to adiabaticity offers maximal gate fidelities under charge noise and phonon-induced decoherence. These results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
5+28 pages, 4+19 figures
References in corpus (19)
- Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
- Lewis-Riesenfeld invariants and transitionless tracking algorithm
- Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
- Dispersive regime of circuit QED: photon-dependent qubit dephasing and relaxation rates
- Enhancing the Coherence of a Spin Qubit by Operating it as a Feedback Loop That Controls its Nuclear Spin Bath
- Microwave-driven coherent operations of a semiconductor quantum dot charge qubit
- Valley Polarization in Si(100) at Zero Magnetic Field
- A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
- Quantum gates between capacitively coupled double quantum dot two-spin qubits
- Orbital and valley state spectra of a few-electron silicon quantum dot
- Exchange-based two-qubit gate for singlet-triplet qubits
- Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits
- Directly accessible entangling gates for capacitively coupled singlet-triplet qubits
- Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device
- Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
- High-fidelity two-qubit gates in silicon above one Kelvin
- Capacitative coupling of singlet-triplet qubits in different inter-qubit geometries
- Magic angle for barrier-controlled double quantum dots
- A robust operating point for capacitively coupled singlet-triplet qubits
Cited by in corpus (4)
- Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations
- Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits
- Theory on electron-phonon spin dehphasing in GaAs multi-electron double quantum dots
- Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots