543 citations · 2.7k across the 24 of their papers we have counts for
23 papers
Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects
Andrii Sokolov, Conor Power, Mathieu Moras +7
Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) mod…
High-fidelity single-spin shuttling in silicon
Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver +12
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connect…
Low disorder and high valley splitting in silicon
Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…
Nonlinear response and crosstalk of electrically driven silicon spin qubits
Brennan Undseth, Xiao Xue, Mohammad Mehmandoost +7
Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots whil…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Computing with spin qubits at the surface code error threshold
Xiao Xue, Maximilian Russ, Nodar Samkharadze +4
High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than the…
Qubits made by advanced semiconductor manufacturing
A. M. J. Zwerver, T. Krähenmann, T. F. Watson +26
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fuel…
Radio frequency reflectometry in silicon-based quantum dots
Y. -Y. Liu, S. G. J. Philips, L. A. Orona +6
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumula…
CMOS-based cryogenic control of silicon quantum circuits
Xiao Xue, Bishnu Patra, Jeroen P. G. van Dijk +21
The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quant…
On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits
Y. Xu, F. K. Unseld, A. Corna +9
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck…
On-chip microwave filters for high-impedance resonators with gate-defined quantum dots
Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema +4
Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the reso…
Rapid high-fidelity gate-based spin read-out in silicon
G. Zheng, N. Samkharadze, M. L. Noordam +5
Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum…
Electron-Electron Interactions and the Paired-to-Nematic Quantum Phase Transition in the Second Landau Level
K. A. Schreiber, N. Samkharadze, G. C. Gardner +5
In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in…
Strong spin-photon coupling in silicon
N. Samkharadze, G. Zheng, N. Kalhor +6
We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stor…
Onset of Quantum Criticality in the Topological-to-Nematic Transition in a Two-dimensional Electron Gas at Filling Factor
K. A. Schreiber, N. Samkharadze, G. C. Gardner +3
Under hydrostatic pressure, the ground state of a two-dimensional electron gas at changes from a fractional quantum Hall state to the stripe phase. By measuring the energy…
High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field
N. Samkharadze, A. Bruno, P. Scarlino +4
We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resi…
Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase
N. Samkharadze, K. A. Schreiber, G. C. Gardner +3
Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a secon…
Observation of Incompressibility at and
N. Samkharadze, I. Arnold, L. N. Pfeiffer +2
The region of filling factors is predicted to support new types of fractional quantum Hall states with topological order different from that of the Laughlin-Jain or the…
Observation of an anomalous density-dependent energy gap of the fractional quantum Hall state in the low density regime
N. Samkharadze, Dohyung Ro, L. N. Pfeiffer +2
We have studied the fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau…
Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the Fractional Quantum Hall State
N. Samkharadze, J. D. Watson, G. Gardner +4
We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the s…
Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields
N. Samkharadze, A. Kumar, M. J. Manfra +3
We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of fiel…
A new type of carbon resistance thermometer with excellent thermal contact at millikelvin temperatures
Nodar Samkharadze, Ashwani Kumar, Gábor A. Csáthy
Using a new brand of commercially available carbon resistor we built a cryogenic thermometer with an extremely good thermal contact to its thermal environment. Because of its super…
Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System
A. Kumar, N. Samkharadze, M. J. Manfra +3
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor . We identified thi…