543 citations · 2.7k across the 24 of their papers we have counts for
13 papers · 1 filter
High-fidelity single-spin shuttling in silicon
Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver +12
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connect…
Low disorder and high valley splitting in silicon
Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…
Nonlinear response and crosstalk of electrically driven silicon spin qubits
Brennan Undseth, Xiao Xue, Mohammad Mehmandoost +7
Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots whil…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Qubits made by advanced semiconductor manufacturing
A. M. J. Zwerver, T. Krähenmann, T. F. Watson +26
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fuel…
Radio frequency reflectometry in silicon-based quantum dots
Y. -Y. Liu, S. G. J. Philips, L. A. Orona +6
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumula…
On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits
Y. Xu, F. K. Unseld, A. Corna +9
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck…
Rapid high-fidelity gate-based spin read-out in silicon
G. Zheng, N. Samkharadze, M. L. Noordam +5
Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum…
Strong spin-photon coupling in silicon
N. Samkharadze, G. Zheng, N. Kalhor +6
We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stor…
High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field
N. Samkharadze, A. Bruno, P. Scarlino +4
We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resi…
Observation of an anomalous density-dependent energy gap of the fractional quantum Hall state in the low density regime
N. Samkharadze, Dohyung Ro, L. N. Pfeiffer +2
We have studied the fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau…
Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields
N. Samkharadze, A. Kumar, M. J. Manfra +3
We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of fiel…
Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System
A. Kumar, N. Samkharadze, M. J. Manfra +3
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor . We identified thi…