371 citations · 1.1k across the 16 of their papers we have counts for
18 papers
Using Landau quantization to probe disorder in semiconductor heterostructures
Asser Elsayed, Davide Costa, Lucas E. A. Stehouwer +5
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays.…
Optical spin pumping in silicon
Stefano Achilli, Damiano Marian, Mario Lodari +5
The generation of an out-of-equilibrium population of spin-polarized carriers is a keystone process for quantum technologies and spintronics alike. It can be achieved through the s…
Buried unstrained germanium channels: a lattice-matched platform for quantum technology
Davide Costa, Patrick Del Vecchio, Karina Hudson +8
Strained Ge (-Ge) and strained Si (-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrat…
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
Wafer-scale low-disorder 2DEG in Si/SiGe without an epitaxial Si cap
Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3
We grow Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Valley splitting in silicon from the interference pattern of quantum oscillations
M. Lodari, L. Lampert, O. Zietz +3
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. Thes…
InSbAs two-dimensional electron gases as a platform for topological superconductivity
Christian M. Moehle, Chung Ting Ke, Qingzhen Wang +10
Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often bee…
Qubits made by advanced semiconductor manufacturing
A. M. J. Zwerver, T. Krähenmann, T. F. Watson +26
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fuel…
Low percolation density and charge noise with holes in germanium
M. Lodari, N. W. Hendrickx, W. I. L. Lawrie +5
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric in…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…
Vanishing Zeeman energy in a two-dimensional hole gas
Patrick Del Vecchio, Mario Lodari, Amir Sammak +2
A clear signature of Zeeman split states crossing is observed in Landau fan diagram of strained germanium two-dimensional hole gas. The underlying mechanisms are discussed based on…
Quantum Dot Arrays in Silicon and Germanium
W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx +15
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become pract…
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…
Ballistic superconductivity and tunable -junctions in InSb quantum wells
Chung Ting Ke, Christian M. Moehle, Folkert K. de Vries +11
Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effect…
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
A. Sammak, D. Sabbagh, N. W. Hendrickx +10
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positi…
Nuclear emulsions for the detection of micrometric-scale fringe patterns: an application to positron interferometry
S. Aghion, A. Ariga, M. Bollani +8
Nuclear emulsions are capable of very high position resolution in the detection of ionizing particles. This feature can be exploited to directly resolve the micrometric-scale fring…