23 citations · 23 across the 2 of their papers we have counts for
9 papers
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
Wafer-scale low-disorder 2DEG in Si/SiGe without an epitaxial Si cap
Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3
We grow Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…
Vanishing Zeeman energy in a two-dimensional hole gas
Patrick Del Vecchio, Mario Lodari, Amir Sammak +2
A clear signature of Zeeman split states crossing is observed in Landau fan diagram of strained germanium two-dimensional hole gas. The underlying mechanisms are discussed based on…
Quantum Dot Arrays in Silicon and Germanium
W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx +15
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become pract…
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…