Qubits made by advanced semiconductor manufacturing

Abstract

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer

23 pages, 4 figures, 12 supplementary figures

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Cited by in corpus (57)

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• Universal logic with encoded spin qubits in silicon
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• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Semiconductor materials stacks for quantum dot spin qubits
• Variability of electron and hole spin qubits due to interface roughness and charge traps
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• Light-Hole Gate-Defined Spin-Orbit Qubit
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• Scalable on-chip multiplexing of silicon single and double quantum dots
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• Compromise-Free Scaling of Qubit Speed and Coherence
• A quantum dot-based frequency multiplier
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• Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
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• Modular nanomagnet design for spin qubits confined in a linear chain
• Designing globally optimal entangling gates using geometric space curves
• Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics
• Control of dephasing in spin qubits during coherent transport in silicon
• Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
• Gate reflectometry in dense quantum dot arrays
• A compact and versatile cryogenic probe station for quantum device testing
• Visual explanations of machine learning model estimating charge states in quantum dots
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• Intrinsic Noise of the Single Electron Box
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots