371 citations · 1.1k across the 16 of their papers we have counts for
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cond-mat.mes-hall2022
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
cond-mat.mes-hall2022★ 23 cited
Wafer-scale low-disorder 2DEG in Si/SiGe without an epitaxial Si cap
Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3
We grow Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…