371 citations · 1.1k across the 16 of their papers we have counts for
5 papers · 1 filter
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
Valley splitting in silicon from the interference pattern of quantum oscillations
M. Lodari, L. Lampert, O. Zietz +3
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. Thes…
InSbAs two-dimensional electron gases as a platform for topological superconductivity
Christian M. Moehle, Chung Ting Ke, Qingzhen Wang +10
Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often bee…
Qubits made by advanced semiconductor manufacturing
A. M. J. Zwerver, T. Krähenmann, T. F. Watson +26
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fuel…