Investigating microwave loss of SiGe using superconducting transmon qubits

Abstract

Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 $\mu$s, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits.

arXiv comment5 pages, 3 figures

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• Molecular beam epitaxy growth of superconducting tantalum germanide
• Ternary Metal Oxide Substrates for Superconducting Circuits
• Material matters in superconducting qubits
• Superconducting-semiconducting voltage-tunable qubits in the third dimension