903 citations · 1.2k across the 8 of their papers we have counts for
8 papers
A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
J. Yoneda, K. Takeda, T. Otsuka +10
Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric su…
A fault-tolerant addressable spin qubit in a natural silicon quantum dot
K. Takeda, J. Kamioka, T. Otsuka +8
Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purifie…
GHz photon-activated hopping between localized states in a silicon quantum dot
T. Ferrus, A. Rossi, A. Andreev +5
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the…
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
T. Obata, K. Takeda, J. Kamioka +6
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si chan…
Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
K. Takeda, T. Obata, Y. Fukuoka +5
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe het…
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
T. Ferrus, A. Rossi, W. Lin +3
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within…